(19) Japanese Patent Office (JP)			(12) Publication of Unexamined Patent Application (A)				(11) Disclosure Number: Hei 05-144827
(51) Int. Cl.5   H01L 21/324		Identification Code Z			Internal Agency Classification No. 8817-4M	(43) Date of Disclosure: 1993.06.11
	Examination Request Status: Not yet requested. No. of Claims: 4 (7 pages total)
				(21) Filing Number: Hei 03-332779 (22) Date of Application: 1991.11.22
(71)  Assignee:            000184713                                     Komatsu Electronic Metals Corporation                                     2612 Shinomiya                                     Hiratsuka-shi, Kanagawa-ken (72)  Inventor:            Hiroyuki KAWAHARA                                     812-1 Shinomiya                                     Hiratsuka-shi, Kanagawa-ken  (72)  Inventor:           Hisami MOTOURA                                     812-1 Shinomiya                                     Hiratsuka-shi, Kanagawa-ken  (72)  Inventor:           Kuniyuki UEMURA                                     812-1 Shinomiya                                     Hiratsuka-shi, Kanagawa-ken

Specifications

 

(54) [Title of the Invention]   Silicon Wafer Treatment Method

 

(57) Summary

[Goal]  The goal of this invention is to lower the number of defects within a semiconductor wafer, thereby improving device yield.

 

[Content of the Invention]  A non-heat-treated semiconductor silicon wafer has an oxygen concentration of 1 × 10¹⁷ to 2 × 10¹⁸ atoms/cm³ and a carbon concentration of less than 1 × 10¹⁶ atoms/cm³. This semiconductor silicon wafer undergoes 0.5 - 5 hours of heat treatment at 1000ºC to 1300ºC within an oxidizing atmosphere or an inert gas atmosphere.

Alternatively, after such heat treatment, the wafer undergoes mirror polishing of the wafer major surface.

 

[Limits of the Patent Claims]

[Claim 1] A silicon wafer treatment method characterized in that the pretreatment silicon wafer has an oxygen concentration of 1 × 10¹⁷ to 2 × 10¹⁸ atoms/cm³ and a carbon concentration of less than 1 × 10¹⁶ atoms/cm³, and that this semiconductor silicon wafer undergoes 0.5 - 5 hours of heat treatment at 1000ºC to 1300ºC within an oxidizing atmosphere.

 

[Claim 2] A silicon wafer treatment method characterized in that the pretreatment silicon wafer has an oxygen concentration of 11 × 10¹⁷ to 2  × 10¹⁸ atoms/cm³ and a carbon concentration of less than 1 × 10¹⁶ atoms/cm³, and that this semiconductor silicon wafer undergoes 0.5 - 5 hours of heat treatment at 1000ºC to 1300ºC within an inert gas atmosphere.

 

[Claim 3] A silicon wafer treatment method characterized in that the pretreatment silicon wafer has an oxygen concentration of 1 × 10¹⁷ to 2 × 10¹⁸ atoms/cm³ and a carbon concentration of less than 1 × 10¹⁶ atoms/cm³, and that this semiconductor silicon wafer undergoes 0.5 - 5 hours of heat treatment at 1000ºC to 1300ºC within an oxidizing atmosphere, followed by mirror polishing of the wafer major surface.

 

[Claim 4] A silicon wafer treatment method characterized in that the pretreatment silicon wafer has an oxygen concentration of 1 × 10¹⁷ to 2 × 10¹⁸ atoms/cm³ and a carbon concentration of less than 1 × 10¹⁶ atoms/cm³, and that this semiconductor silicon wafer undergoes 0.5 - 5 hours of heat treatment at 1000ºC to 1300ºC within an inert gas atmosphere, followed by mirror polishing of the wafer major surface.