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(19) Japanese Patent Office (JP) |
(12) Publication of Unexamined Patent Application (A) |
(11) Disclosure Number: Hei 05-144828 |
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(51) Int. Cl.5
H01L 21/324 C30B 15/00 C30B 29/06 C30B 33/020 |
Identification Code
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Internal Agency Classification No.
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(43) Date of Disclosure: 1993.06.11 |
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Examination Request Status: Not yet requested. No. of Claims: 2 (7 pages total) |
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(21) Filing Number: Hei 03-303391 (22) Date of Application: 1991.11.19 |
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(71) Assignee: 000006655 Nippon Steel Corporation 6-3 Otemachi 2-chome Chiyoda-ku, Tokyo-to (72) Inventor: Toshio IWASAKI c/o R & D Laboratory Nippon Steel Corporation 1618 Ida, Nakahara-ku Kawasaki-shi, Kanagawa-ken (72) Inventor: Hirotsugu HAGA c/o R & D Laboratory Nippon Steel Corporation 1618 Ida, Nakahara-ku Kawasaki-shi, Kanagawa-ken (74) Agent: Mikio HATTA, Attorney (and two additional persons) |
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Specifications
(54) [Title of the Invention] Semiconductor Heat Treatment Method
(57) Summary
[Goal] A silicon wafer is manufactured from single crystal silicon produced by the Czochralski method. The goal of this invention is to prevent the occurrence of a ring-shaped distribution of oxygen induced stacking faults within the wafer surface as the wafer undergoes high temperature oxidation.
[Content of the Invention] When a single crystal silicon wafer undergoes heat treatment, this wafer is treated for 5 minutes - 100 hours within a temperature range of 1,200ºC to 1390ºC under an atmosphere consisting of nitrogen or inert gas.
[Results of the Invention] Due to silicon wafer pretreatment at 1,100ºC for one hour as per the method of this invention, the oxygen induced stacking fault surface and internal densities were reduced to less than 1/10th those of silicon wafers without such pretreatment.
[Scope of the Patent Claims]
[Claim 1] This invention pertains to heat treatment of a silicon wafer manufactured from a silicon semiconductor crystal produced by the Czochralski method. This invention is a method that, prior to said heat treatment, said silicon wafer undergoes pretreatment for 5 minutes - 100 hours within a temperature range of 1,200ºC to 1390ºC under an atmosphere consisting of nitrogen or inert gas.
[Claim 2] This invention is a method that per Claim 1 that is characterized in that said pretreatment under nitrogen or inert gas is carried out within the temperature range of 1,300ºC to 1350ºC ...
